Invention Grant
- Patent Title: Method and device for estimating level of damage or lifetime expectation of power semiconductor module
-
Application No.: US15779774Application Date: 2017-01-26
-
Publication No.: US10705133B2Publication Date: 2020-07-07
- Inventor: Nicolas Degrenne , Stefan Mollov
- Applicant: MITSUBISHI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@673efb2d
- International Application: PCT/JP2017/003679 WO 20170126
- International Announcement: WO2017/135333 WO 20170810
- Main IPC: G01R31/26
- IPC: G01R31/26 ; G01R31/28 ; G01R31/00 ; G01K1/14

Abstract:
The present invention concerns a method and a device for estimating a level of damage or a lifetime expectation of a power semiconductor module comprising at least one die that is mechanically, thermally, and electrically attached to a substrate, composed of plural layers of different materials. The invention: obtains power losses of the power semiconductor module, obtains the temperature in at least two different locations of the power semiconductor module, estimates a thermal model between the at least two different locations of the power semiconductor module using the determined power losses and the obtained temperatures, determines if a notification indicating the level of damage or the lifetime expectation has to be performed according to the estimated thermal model and a reference thermal model. notifies the level and location of damage or the lifetime expectation if the determining step determines that the notification has to be performed.
Public/Granted literature
- US20190285689A1 METHOD AND DEVICE FOR ESTIMATING LEVEL OF DAMAGE OR LIFETIME EXPECTATION OF POWER SEMICONDUCTOR MODULE Public/Granted day:2019-09-19
Information query