Invention Grant
- Patent Title: Memory control device, control method of flash memory, and method for generating security feature of flash memory
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Application No.: US16354280Application Date: 2019-03-15
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Publication No.: US10705743B2Publication Date: 2020-07-07
- Inventor: Shih-Fu Huang , Cheng-Yu Chen , Yi-Lin Hsieh , Jing-Long Xiao
- Applicant: RAYMX Microelectronics Corp.
- Applicant Address: CN Hefei, Anhui Province
- Assignee: RAYMX MICROELECTRONICS CORP.
- Current Assignee: RAYMX MICROELECTRONICS CORP.
- Current Assignee Address: CN Hefei, Anhui Province
- Agency: McClure, Qualey & Rodack, LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@30356f00
- Main IPC: G11C16/14
- IPC: G11C16/14 ; G06F3/06 ; G11C16/10 ; G11C16/26 ; G11C16/22 ; G11C16/04

Abstract:
A method for generating a security feature of a flash memory includes determining a memory block from a plurality of memory blocks in the flash memory; erasing data of the determined memory block of the flash memory; providing a predetermined voltage to the determined memory block to obtain a plurality of corresponding threshold voltages of a plurality of cells in the determined memory block, wherein each of the corresponding threshold voltages corresponds to a characteristic of each cell in the determined memory block; and establishing a security feature based on the plurality of corresponding threshold voltages.
Public/Granted literature
Information query