A memory device includes a plurality of memory cells and first circuitry coupled the plurality of memory cells, wherein the first circuitry is configured to perform a memory operation on at least one memory cell of the plurality of memory cells. The memory device also includes a charge pump coupled to the first circuitry, wherein the charge pump comprises a pump oscillator configured to generate an oscillator signal having only pulses with a width above a predetermined threshold pulse width and a pump core configured to receive the oscillator signal and a first electrical power signal at a first voltage, generate a second electrical power signal at a second voltage based upon the oscillator signal and the first voltage.