Invention Grant
- Patent Title: Refresh control circuit, semiconductor memory device, and refresh method thereof
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Application No.: US16145460Application Date: 2018-09-28
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Publication No.: US10706908B2Publication Date: 2020-07-07
- Inventor: Do-Hong Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@669e3f77
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C11/406 ; G11C29/00 ; G11C11/4072 ; G11C11/408

Abstract:
A semiconductor memory device includes: first to Nth memory banks each including a normal cell region coupled to normal word lines and a redundant cell region coupled to redundant word lines; first to Nth non-volatile memories that correspond to the first to Nth memory banks, respectively, each including a plurality of memory sets for programming repair addresses of the corresponding memory banks; a refresh control circuit for generating first to Nth count values by counting a number of the memory sets used in the first to Nth non-volatile memories, and generating a redundant reset signal based on the first to Nth count values; and an address generation circuit for sequentially generating normal addresses for selecting the normal word lines and redundant addresses for selecting the redundant word lines based on a refresh signal, and initializing the redundant addresses based on the redundant reset signal.
Public/Granted literature
- US20190279706A1 REFRESH CONTROL CIRCUIT, SEMICONDUCTOR MEMORY DEVICE, AND REFRESH METHOD THEREOF Public/Granted day:2019-09-12
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