A non-volatile memory device of the disclosure includes a memory cell, a writing circuit, and a current controller. The memory cell is disposed at an intersection of a first wiring and a second wiring, and includes a variable resistance element having a resistance state that is variable between a first resistance state and a second resistance state. The writing circuit varies the variable resistance element from the first resistance state to the second resistance state, and thereby performs writing of data on the memory cell. The current controller controls a current and thereby limits the current to a predetermined limit current value. The current is caused to flow through the first wiring or the second wiring by the writing circuit upon performing of the writing of the data. The current controller causes the predetermined limit current value to be a first limit current value in a period before a time at which the variable resistance element is varied to the second resistance state, and varies the predetermined limit current value from the first limit current value to a second limit current value after the time at which the variable resistance element is varied to the second resistance state.