Invention Grant
- Patent Title: Memory system
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Application No.: US16115516Application Date: 2018-08-28
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Publication No.: US10706940B2Publication Date: 2020-07-07
- Inventor: Takaya Handa , Yoshihisa Kojima , Kiyotaka Iwasaki
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2b9ae61a
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/08 ; G11C16/32 ; G11C16/24 ; G11C7/10 ; G11C7/22

Abstract:
A semiconductor memory device includes a memory cell array, an input/output circuit configured to output read data from the semiconductor memory device, a first data latch configured to latch data read from the memory cell array as the read data, a second data latch to which the read data is transferred from the first data latch and from which the read data is transferred to the input/output circuit, a signaling circuit configured to output a ready signal or a busy signal, and a control circuit configured to control the signaling circuit to output the busy signal while the read data is being latched in the first data latch during a read operation performed on the memory cell array and to output the ready signal while the read data latched in the first data latch is being transferred from the first latch to the second latch.
Public/Granted literature
- US20190198120A1 MEMORY SYSTEM Public/Granted day:2019-06-27
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