A double-biased three-dimensional one-time-programmable read-only memory (3D-OTP) comprises an OTP array stacked on a semiconductor substrate. The OTP array comprises a dummy word line, a plurality of data word lines and data bit lines. The dummy OTP cells at the intersections of the dummy word line and all data bit lines are unprogrammed. During read, both voltages on the dummy word line and a selected data word line are raised.