Provided is a one-time programmable (OTP) memory device, which includes a data input circuit that receives a supply voltage and applies the supply voltage to one of a plurality of bit lines that is selected by a write switch, and an OTP memory cell array including a plurality of OTP memory cells arranged in a plurality of rows and columns. The OTP memory cells on the same row connected to the same bit line. The OTP memory device also includes a column decoder that selects one of the plurality of columns of the OTP memory cells to apply the supply voltage thereto, and a detection amplifier that performs a read operation of the OTP memory cells connected to one of the plurality of bit lines that is selected by a read switch.