Invention Grant
- Patent Title: Method for manufacturing semiconductor device, non-transitory computer-readable recording medium, and substrate processing apparatus
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Application No.: US15933104Application Date: 2018-03-22
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Publication No.: US10707074B2Publication Date: 2020-07-07
- Inventor: Yoshimasa Nagatomi , Hirohisa Yamazaki
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: Kokusai Electric Corporation
- Current Assignee: Kokusai Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@77760d72
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/673 ; C23C16/52 ; C23C16/44 ; C23C16/455 ; C23C16/40 ; H01L27/108
Abstract:
By sequentially performing, a plurality of times, a step of supplying a mixed gas of an organic metal-containing source gas and an inert gas to a process chamber housing a substrate by adjusting a flow velocity of the mixed gas on the substrate to 7.8 m/s to 15.6 m/s and adjusting a partial pressure of the organic metal-containing source gas in the mixed gas to 0.167 to 0.3, a step of exhausting the process chamber, a step of supplying an oxygen-containing gas to the process chamber, and a step of exhausting the process chamber, a metal oxide film is formed on the substrate.
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