Invention Grant
- Patent Title: Methods for depositing thin films comprising indium nitride by atomic layer deposition
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Application No.: US13525072Application Date: 2012-06-15
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Publication No.: US10707082B2Publication Date: 2020-07-07
- Inventor: Suvi Haukka , Viljami J. Pore , Antti Niskanen
- Applicant: Suvi Haukka , Viljami J. Pore , Antti Niskanen
- Applicant Address: NL Almere
- Assignee: ASM International N.V.
- Current Assignee: ASM International N.V.
- Current Assignee Address: NL Almere
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: H01L21/205
- IPC: H01L21/205 ; H01L21/02 ; C23C16/30 ; C23C16/455 ; C30B25/14 ; C30B29/40
Abstract:
Atomic layer deposition (ALD) processes for forming thin films comprising InN are provided. The thin films may find use, for example, in light-emitting diodes.
Public/Granted literature
- US20130109160A1 METHODS FOR DEPOSITING THIN FILMS COMPRISING INDIUM NITRIDE BY ATOMIC LAYER DEPOSITION Public/Granted day:2013-05-02
Information query
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