Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16319975Application Date: 2016-10-24
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Publication No.: US10707141B2Publication Date: 2020-07-07
- Inventor: Naoki Yoshimatsu , Osamu Usui , Yuji Imoto
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2016/081492 WO 20161024
- International Announcement: WO2018/078705 WO 20180503
- Main IPC: H01L23/057
- IPC: H01L23/057 ; H01L21/48 ; H01L21/56 ; H01L23/31 ; H01L23/498 ; H01L23/28 ; H01L23/48
Abstract:
First and second electrodes (12,13) are provided on an upper surface of the semiconductor chip (9) and spaced apart from each other. A wiring member (15) includes a first joint (15a) bonded to the first electrode (12) and a second joint (15b) bonded to the second electrode (13). Resin (2) seals the semiconductor chip (9), the first and second electrodes (12,13) and the wiring member (15). A hole (18) extending through the wiring member (15) up and down is provided between the first joint (15a) and the second joint (15b).
Public/Granted literature
- US20190267297A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-08-29
Information query
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