Invention Grant
- Patent Title: Semiconductor device having lithography marks and resin portions in a cutting region
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Application No.: US15909425Application Date: 2018-03-01
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Publication No.: US10707174B2Publication Date: 2020-07-07
- Inventor: Satoshi Tsukiyama , Hideo Aoki
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@b3228d0
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L23/31 ; H01L21/78
Abstract:
According to one embodiment, a semiconductor device includes a device region covered with a resin film and a dicing region extending along at least one side of the device region, the dicing region including at least a first lithography mark and a second lithography mark. The resin film includes a first dicing region portion which covers a portion of the dicing region between the first lithography mark and the second lithography mark.
Public/Granted literature
- US20190088601A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-03-21
Information query
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