Invention Grant
- Patent Title: Impedance matching circuit for RF devices and method therefor
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Application No.: US15959812Application Date: 2018-04-23
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Publication No.: US10707180B2Publication Date: 2020-07-07
- Inventor: Ricardo Uscola , Michele Lynn Miera , Sai Sunil Mangaonkar , Jitesh Vaswani
- Applicant: NXP USA, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Main IPC: H01L23/66
- IPC: H01L23/66 ; H01L23/00

Abstract:
A bond pad structure and method are provided. The structure includes a first conductive layer formed over a substrate. A second conductive layer is formed over a first portion of the first conductive layer, and a first portion of the second conductive layer forms a first capacitor electrode. A third conductive layer is formed over the first conductive layer and second conductive layer, and a first portion of the third conductive layer forms a second capacitor electrode. A second portion of the third conductive layer forms a wire bond region. A dielectric material is disposed between the first capacitor electrode and the second capacitor electrode to form a first capacitor.
Public/Granted literature
- US20190326233A1 IMPEDANCE MATCHING CIRCUIT FOR RF DEVICES AND METHOD THEREFOR Public/Granted day:2019-10-24
Information query
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