Invention Grant
- Patent Title: FINFET non-volatile semiconductor memory device and method of manufacturing the FINFET non-volatile semiconductor memory device
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Application No.: US15819761Application Date: 2017-11-21
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Publication No.: US10707223B2Publication Date: 2020-07-07
- Inventor: Shunichi Narumi
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2e753f6f
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L23/00 ; H01L23/31 ; H01L27/11568 ; H01L29/78 ; H01L29/792 ; H01L29/423 ; H01L29/66 ; H01L29/40 ; H01L29/51 ; H01L27/11565 ; H01L21/02 ; H01L21/28
Abstract:
Characteristics of a semiconductor device having a nonvolatile memory are improved. A high dielectric constant film is provided on an insulating film between a memory gate electrode and a fin as components of a nonvolatile memory. The high dielectric constant film is provided over the top of the fin and the top of an element isolation region, but is not provided over a side surface of the fin. In this way, since the high dielectric constant film is provided over the top of the fin and the top of the element isolation region, it is possible to relax an electric field in the vicinity of each of the upper and lower corner portions of the fin, leading to an improvement in disturbance characteristics.
Public/Granted literature
- US20180182774A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE Public/Granted day:2018-06-28
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