Invention Grant
- Patent Title: Silicon carbide semiconductor device, and method for manufacturing same
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Application No.: US15129542Application Date: 2015-05-14
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Publication No.: US10707299B2Publication Date: 2020-07-07
- Inventor: Hiromu Shiomi
- Applicant: Sumitomo Electric Industries, Ltd.
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Baker Botts L.L.P.
- Agent Michael A. Sartori
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4dda2d24
- International Application: PCT/IB2015/053547 WO 20150514
- International Announcement: WO2015/145411 WO 20151001
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/06 ; H01L29/66 ; H01L29/16 ; H01L21/04 ; H01L29/08 ; H01L21/02 ; H01L29/10 ; H01L29/78 ; H01L29/51
Abstract:
The silicon carbide substrate includes a first impurity region, a second impurity region, and a third impurity region. The first impurity region includes: a first region in contact with the second impurity region; a second region that is in contact with the first region, that is located opposite to the second impurity region when viewed from the first region, and that has an impurity concentration higher than an impurity concentration of the first region; and a third region that is in contact with the second region, that is located opposite to the first region when viewed from the second region, and that has an impurity concentration lower than the impurity concentration of the second region. The gate insulating film is in contact with the first region, the second impurity region, and the third impurity region at a side portion of a trench.
Public/Granted literature
- US20170110534A1 SILICON CARBIDE SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME Public/Granted day:2017-04-20
Information query
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