A semiconductor device has a termination structure region that includes a lower parallel pn structure having lower first-columns of a first conductivity type and lower second-columns of a second conductivity type; a center parallel pn structure having center first-columns of the first conductivity type and first rings of the second conductivity type; an upper parallel pn structure having upper first-columns of the first conductivity type and upper second-columns of the second conductivity type; and an uppermost parallel pn structure having uppermost first-columns of the first conductivity type and second rings of the second conductivity type. The first and second rings are wider than the lower second-columns. An interval between the first rings and between the second rings is wider than an interval between the lower second-columns. Positions of the first rings differ from positions of the second rings, along a direction parallel to a front surface of the semiconductor device.