Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16286649Application Date: 2019-02-27
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Publication No.: US10707310B2Publication Date: 2020-07-07
- Inventor: Shigeya Kimura , Hisashi Yoshida
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@57b84c42
- Main IPC: H01L31/0256
- IPC: H01L31/0256 ; H01L29/20 ; H01L29/16 ; H01L29/778 ; H01L29/66 ; H01L29/78

Abstract:
According to one embodiment, a semiconductor device includes first to third regions, and first to third electrodes. The first region includes a first partial region, a second partial region, and a third partial region between the first and second partial regions. A direction from the first partial region toward the first electrode is aligned with a first direction. A second direction from the first electrode toward the second electrode crosses the first direction. A direction from the third partial region toward the third electrode is aligned with the first direction. A position of the third electrode is between a position of the first electrode and a position of the second electrode in the second direction. At least a portion of the second region is provided between the first and second electrodes. At least a portion of the third region is provided between the first and second regions.
Information query
IPC分类: