- Patent Title: Field effect transistors with ferroelectric dielectric materials
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Application No.: US16218151Application Date: 2018-12-12
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Publication No.: US10707320B2Publication Date: 2020-07-07
- Inventor: Cheng-Ming Lin , Kai Tak Lam , Sai-Hooi Yeong , Chi On Chui , Ziwei Fang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/51 ; H01L29/49 ; H01L29/66 ; H01L29/78 ; H01L21/28 ; H01L21/768
Abstract:
A method of forming a semiconductor device includes forming a hafnium-containing layer over a semiconductor layer, simultaneously performing a thermal annealing process and applying an electrical field to the hafnium-containing layer to form a ferroelectric hafnium-containing layer, and forming a gate electrode over the ferroelectric hafnium-containing layer.
Public/Granted literature
- US20200127111A1 Field Effect Transistors with Ferroelectric Dielectric Materials Public/Granted day:2020-04-23
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