Invention Grant
- Patent Title: Power device with multiple field stop layers
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Application No.: US16134742Application Date: 2018-09-18
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Publication No.: US10707321B2Publication Date: 2020-07-07
- Inventor: Kyu-hyun Lee , Se-kyeong Lee , Doo-seok Yoon , Soo-hyun Kang , Young-chul Choi
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Brake Hughes Bellermann LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@64d50ed6 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@14b304d2
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/739 ; H01L29/36 ; H01L29/06 ; H01L29/08 ; H01L29/732 ; H01L21/02 ; H01L21/304 ; H01L29/10
Abstract:
A power device, which has a Field Stop (FS) layer based on a semiconductor substrate between a collector region and a drift region in an FS-IGBT structure. The FS layer includes multiple implants for improved functionality of the power device.
Public/Granted literature
- US20190019879A1 POWER DEVICE WITH A FIELD STOP LAYER Public/Granted day:2019-01-17
Information query
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