According to one embodiment, a magnetic memory device includes a stacked structure including first and second magnetic layers having variable and fixed magnetization directions, respectively, and a nonmagnetic layer provided between the first and second magnetic layers and containing a first compound containing first cationic and anionic elements, and a predetermined-material layer provided around side surfaces of the stacked structure and containing a second compound containing second added cationic and second added anionic elements. An absolute value of a valence number (ionic valency) of the second added cationic element is less than that of the first cationic element, and an absolute value of a valence number (ionic valency) of the second added anionic element is less than that of the first anionic element.