A tandem solar cell structure is described with the following features: (a) Monolithic configuration with at least two different absorbers (104, 108) of different materials for photovoltaic energy conversion (b) an absorber (108) consisting of crystalline silicon (c) a charge carrier selective contact arranged on the side of the silicon absorber (108) directed to the adjacent absorber (104) (d) configuration of the charge carrier selective contact from a thin interface oxide 107 and an amorphous, partially crystalline or polycrystalline layer applied thereto, mainly consisting of silicon, either p (106) or n doped (201) The charge carrier selective contact made up of layers 107 and 106 or 201, respectively, ensures excellent surface passivation of the crystalline silicon absorber 108, as well as selective extraction of a charge carrier type from the latter over the entire surface. Thus, a vertical current flow is achieved, so that lateral transverse conductivity is not required in every sub-cell. The formation of a tunnel contact to the adjacent layer may be achieved by high doping of the layers 106 and 201. The thickness and/or the doping of the layers 106 and 201 may be used to match the generation currents in the individual sub-cells. The temperature stability of layers 107, 106 or 201, respectively, allows the application of subsequent manufacturing steps with temperatures >400° C.