A method of forming a light emitting device includes forming a growth mask layer including openings on a doped compound semiconductor layer, forming first light emitting diode (LED) subpixels by forming a plurality of active regions and second conductivity type semiconductor material layers employing selective epitaxy processes, and transferring each first LED subpixel to a backplane. An anode contact electrode may be formed on the second conductivity type semiconductor material layers for redundancy. The doped compound semiconductor layer may be patterned with tapered sidewalls to enhance etendue. An optically clear encapsulation matrix may be formed on the doped compound semiconductor material layer to enhance etendue. Lift-off processes may be employed for the active regions. Cracking of the LEDs may be suppressed employing a thick reflector layer.