Invention Grant
- Patent Title: Semiconductor device, and method for manufacturing semiconductor device
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Application No.: US16133206Application Date: 2018-09-17
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Publication No.: US10707388B2Publication Date: 2020-07-07
- Inventor: Teppei Kunimune , Masafumi Kuramoto
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-shi
- Agency: Global IP Counselors, LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7cdd8e61
- Main IPC: H01L33/56
- IPC: H01L33/56 ; H01L33/52 ; H01L23/31 ; H01L33/48
Abstract:
A semiconductor device includes a base, a semiconductor element mounted on the base, a porous metal sintered body and a sealing member. The porous metal sintered body is provided on the base in an area different from an area on which the semiconductor element is mounted. The sealing member covers the semiconductor element. The sealing member is placed inside the porous metal sintered body.
Public/Granted literature
- US20190097102A1 SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2019-03-28
Information query
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