Invention Grant
- Patent Title: Resistance variable memory device with nanoparticle electrode and method of fabrication
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Application No.: US16115311Application Date: 2018-08-28
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Publication No.: US10707416B2Publication Date: 2020-07-07
- Inventor: Jun Liu , Kristy A. Campbell
- Applicant: OVONYX MEMORY TECHNOLOGY, LLC
- Applicant Address: US VA Alexandria
- Assignee: OVONYX MEMORY TECHNOLOGY, LLC
- Current Assignee: OVONYX MEMORY TECHNOLOGY, LLC
- Current Assignee Address: US VA Alexandria
- Agency: Holland & Hart LLP
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a nanoparticle is provided between an electrode and a chalcogenide glass region. The method of forming the nanoparticle utilizes a template over the electrode or random deposition of the nanoparticle.
Public/Granted literature
- US20190013467A1 RESISTANCE VARIABLE MEMORY DEVICE WITH NANOPARTICLE ELECTRODE AND METHOD OF FABRICATION Public/Granted day:2019-01-10
Information query
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