Invention Grant
- Patent Title: Semiconductor laser element
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Application No.: US16389761Application Date: 2019-04-19
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Publication No.: US10707651B2Publication Date: 2020-07-07
- Inventor: Yasuo Kan , Ryuhichi Sogabe
- Applicant: SHARP KABUSHIKI KAISHA
- Applicant Address: JP Sakai, Osaka
- Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee Address: JP Sakai, Osaka
- Agency: ScienBiziP, P.C.
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/223 ; H01S5/22 ; H01S5/022 ; H01S5/343

Abstract:
A semiconductor laser element that includes a stripe-shaped light-emitting region and that is formed by adhering a surface of the semiconductor laser element on a side opposite to a semiconductor substrate and a submount to each other by a solder layer includes a terrace section on a surface of the semiconductor laser element that is adhered by the solder layer, the terrace section being separated from a ridge portion, which is a current-carrying portion, by a grooved portion. A top surface of a region including the grooved portion is covered by a metal. The terrace section is divided into a plurality of portions that are disposed in a scattered manner.
Public/Granted literature
- US20190379179A1 SEMICONDUCTOR LASER ELEMENT Public/Granted day:2019-12-12
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