Invention Grant
- Patent Title: High-frequency amplifier circuitry and semiconductor device
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Application No.: US16535146Application Date: 2019-08-08
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Publication No.: US10707823B1Publication Date: 2020-07-07
- Inventor: Toshiki Seshita , Yasuhiko Kuriyama
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: White & Case LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6f423dc8
- Main IPC: H04B1/00
- IPC: H04B1/00 ; H04M1/00 ; H03G3/30 ; H03F1/02 ; H02P29/40

Abstract:
High-frequency amplifier circuitry includes first amplifier circuitry, second amplifier circuitry, and noise figure improving circuitry. The first amplifier circuitry includes a first transistor and a grounded-gate third transistor. The first transistor has a source grounded via a first source inductor and a gate to which an input signal is applied. The third transistor is configured to output from a drain a signal obtained by amplifying a signal outputted from a drain of the first transistor. The second amplifier circuitry includes a same circuit constant as a circuit constant of the first amplifier circuitry and includes a second transistor and a grounded-gate fourth transistor. The noise figure improving circuitry connects the source of the first transistor and the source of the second transistor to each other.
Information query