Invention Grant
- Patent Title: Power stage with sequential power transistor gate charging
-
Application No.: US16142699Application Date: 2018-09-26
-
Publication No.: US10707840B2Publication Date: 2020-07-07
- Inventor: Emanuele Bodano , Vratislav Michal , Joachim Pichler
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Schiff Hardin LLP
- Main IPC: H02M3/07
- IPC: H02M3/07 ; H03K3/012 ; H03K17/041
Abstract:
A power stage having a power transistor coupled between a power supply and a switching node; a charge pump coupled between the power supply and a gate of the power transistor; and a gate driver configured to charge the gate of the power transistor until the gate voltage reaches a predefined voltage, and further charge the gate of the power transistor from the charge pump.
Public/Granted literature
- US20200099367A1 POWER STAGE WITH SEQUENTIAL POWER TRANSISTOR GATE CHARGING Public/Granted day:2020-03-26
Information query
IPC分类:
