A control device for controlling a power semiconductor component which includes at least two voltage-controlled power semiconductor devices which are electrically connected in parallel and which have each a control connection is disclosed. The control device includes a driver element which can be used to set electrical voltages at the control connections of the power semiconductor devices. The control device includes a measuring unit configured to capture electrical currents which flow through the power semiconductor devices. The driver element is configured to set a level and/or a temporal profile of the electrical voltages on the basis of the electrical currents.