Invention Grant
- Patent Title: Capacitance balance in dual sided contact switch
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Application No.: US16230884Application Date: 2018-12-21
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Publication No.: US10707866B1Publication Date: 2020-07-07
- Inventor: Qingqing Liang , Ravi Pramod Kumar Vedula , George Peter Imthurn , Christopher Nelles Brindle , Sinan Goktepeli
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated/Seyfarth Shaw LLP
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H03K17/10 ; H03K17/284 ; H01L27/12 ; H01L23/50 ; H01L21/76 ; H01L21/84 ; H01L23/66 ; H01L21/762

Abstract:
A dual sided contact switch has a first independent drain/source region of a multi-gate active device. The dual sided contact switch also has a first shared drain/source region of the multi-gate active device. The dual sided contact switch has a second independent drain/source region of the multi-gate active device, adjacent to the first shared drain/source region. The dual sided contact switch also has a second shared drain/source region of the multi-gate active device, adjacent to the first independent drain/source region. The dual sided contact switch has a gate region between the first independent drain/source region and the first shared drain/source region, and also between the second independent drain/source region and the second shared drain/source region.
Information query
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