Invention Grant
- Patent Title: Memresistive security hash function
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Application No.: US15965924Application Date: 2018-04-29
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Publication No.: US10708041B2Publication Date: 2020-07-07
- Inventor: Shahar Kvatinsky , Leonid Azriel
- Applicant: Technion Research & Development Foundation Limited
- Applicant Address: IL Haifa
- Assignee: Technion Research & Development Foundation Limited
- Current Assignee: Technion Research & Development Foundation Limited
- Current Assignee Address: IL Haifa
- Main IPC: H04L9/06
- IPC: H04L9/06 ; G11C13/00 ; H04L9/32

Abstract:
Apparatus and method for hashing a message, comprises using an array of individually selectable memristor cells. The memristor cells are subject to write disturb that affects cells neighboring a selected cell so that a write operation into one cell has a knock-on effect on the neighbors. The array is initiated into a known stable state so that these changes to neighboring cells are predictable according to proximity to the currently selected cell. An inserter sequentially mixes bits with the hash so far to insert bits into successively selected cells of the memristor array and forms a succession of memristor array states including the knock on effects on the neighboring cells. A final resulting memristor array state following input of the bits forms the hash of the message.
Public/Granted literature
- US20180316493A1 MEMRISTIVE SECURITY HASH FUNCTION Public/Granted day:2018-11-01
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