Invention Grant
- Patent Title: Mask blank having a resist layer, method for manufacturing mask blank having resist layer, and method for manufacturing transfer mask
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Application No.: US15776862Application Date: 2016-11-07
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Publication No.: US10712652B2Publication Date: 2020-07-14
- Inventor: Takahiro Hiromatsu , Hiroaki Shishido , Seishi Shibayama
- Applicant: HOYA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HOYA CORPORATION
- Current Assignee: HOYA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3288c0e4
- International Application: PCT/JP2016/082927 WO 20161107
- International Announcement: WO2017/086196 WO 20170526
- Main IPC: G03F1/40
- IPC: G03F1/40 ; G03F1/38 ; G03F1/78 ; G03F1/26

Abstract:
A mask blank having a resist layer, which enables charge-up to be suppressed during electron beam irradiation. The mask blank having a resist layer includes a substrate having a thin film, a resist layer formed on a surface of the thin film, and a conductive layer formed on the resist layer. The conductive layer includes a first metal layer containing aluminum as a main component thereof and a second metal layer made of a metal other than aluminum. The first metal layer is formed on the resist layer side of the second metal layer.
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