Invention Grant
- Patent Title: Memory system, memory interfacing device, and interfacing method performed in the memory system
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Application No.: US14689400Application Date: 2015-04-17
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Publication No.: US10713197B2Publication Date: 2020-07-14
- Inventor: Jae-Geun Park , Young-Jin Cho
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeongg-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeongg-Do
- Agency: F. Chau & Associates, LLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6d028197
- Main IPC: G06F13/28
- IPC: G06F13/28 ; G06F13/16

Abstract:
A method of interfacing a memory controller and a memory device in a memory system includes transmitting a control signal between the memory controller and the memory device using a time division multiplexing (TDM) communication process, and transmitting data between the memory controller and the memory device using a serializer/deserializer (SERDES) communication process. Data communication in the memory system is performed via a physical channel and a plurality of virtual channels corresponding to the physical channel.
Public/Granted literature
- US20150347331A1 MEMORY SYSTEM, MEMORY INTERFACING DEVICE, AND INTERFACING METHOD PERFORMED IN THE MEMORY SYSTEM Public/Granted day:2015-12-03
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