Invention Grant
- Patent Title: Layered semiconductor device, and production method therefor
-
Application No.: US16694136Application Date: 2019-11-25
-
Publication No.: US10714151B2Publication Date: 2020-07-14
- Inventor: Yasutoshi Yamada , Kouji Uemura , Takao Adachi
- Applicant: ULTRAMEMORY INC.
- Applicant Address: JP Tokyo
- Assignee: ULTRAMEMORY INC.
- Current Assignee: ULTRAMEMORY INC.
- Current Assignee Address: JP Tokyo
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@190c66f9
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C29/04 ; G11C11/407 ; H01L25/065 ; H01L25/07 ; G11C5/00 ; H01L25/18 ; G11C29/00 ; G11C29/44 ; G11C7/12 ; G11C29/12 ; G11C8/08

Abstract:
The purposes of the present invention are: to provide a layered semiconductor device capable of improving production yield; and to provide a method for producing said layered semiconductor device. This layered semiconductor device has, layered therein, a plurality of semiconductor chips, a reserve semiconductor chip which is used as a reserve for the semiconductor chips, and a control chip for controlling the operating states of the plurality of semiconductor chips and the operating state of the reserve semiconductor chip. In such a configuration, the semiconductor chips and the reserve semiconductor chip include contactless communication units and operating switches. The semiconductor chips and the reserve semiconductor chip are capable of contactlessly communicating with another of the semiconductor chips via the contactless communication units. The control chip controls the operating states of the semiconductor chips by switching the operating switches of the semiconductor chips, and controls the operating state of the reserve semiconductor chip by switching the operating switch of the reserve semiconductor chip.
Public/Granted literature
- US20200090708A1 LAYERED SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD THEREFOR Public/Granted day:2020-03-19
Information query