Invention Grant
- Patent Title: Page buffer circuit and nonvolatile storage device
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Application No.: US16280049Application Date: 2019-02-20
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Publication No.: US10714190B2Publication Date: 2020-07-14
- Inventor: Tomofumi Kitani
- Applicant: Powerchip Semiconductor Manufacturing Corporation
- Applicant Address: TW Hsinchu
- Assignee: Powerchip Semiconductor Manufacturing Corporation
- Current Assignee: Powerchip Semiconductor Manufacturing Corporation
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5d30c9d9
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/26 ; G11C16/34 ; G11C16/10 ; G11C16/24

Abstract:
A page buffer circuit includes a latch circuit that temporarily stores data when data is written in or read out from a memory cell through a bit line, the page buffer circuit is configured using a switched capacitor circuit. The page buffer circuit includes a first capacitor connected to a sense terminal connected to one end of the latch circuit, a second capacitor connected to the bit line, a first switch interposed between the sense terminal and the second capacitor, a second switch interposed between the sense terminal and a supply voltage, a first transistor including a control terminal and a first element terminal connected to both terminals of the first switch in parallel, a second transistor including first and second element terminals connected between a second element terminal of the first transistor and a ground, and a control circuit controlling the first and second switches and the second transistor.
Public/Granted literature
- US20200160917A1 PAGE BUFFER CIRCUIT AND NONVOLATILE STORAGE DEVICE Public/Granted day:2020-05-21
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