Methods of operating a memory might include sensing a state of each data line of a plurality of data lines while increasing a voltage level applied to each access line of a plurality of access lines commonly connected to a plurality of strings of series-connected memory cells, determining a particular voltage level at which the state of each data line of a first subset of the plurality of data lines has changed, decreasing a voltage level applied to a particular access line of the plurality of access lines, and sensing a state of each data line of a second subset of the plurality of data lines while applying the particular voltage level to the particular access line. Methods of operating a memory might further include determining a pass voltage and plurality of read voltages for a read operation during a precharge phase of the read operation, applying the pass voltage to each unselected access line of a plurality of access lines, and, for each read voltage of the plurality of read voltages, applying that read voltage to a selected access line of the plurality of access lines and sensing a data state of a memory cell connected to the selected access line.