Invention Grant
- Patent Title: Method to fabricate thermally stable low K-FinFET spacer
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Application No.: US16354654Application Date: 2019-03-15
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Publication No.: US10714331B2Publication Date: 2020-07-14
- Inventor: Mihaela Balseanu , Srinivas D. Nemani , Mei-Yee Shek , Ellie Y. Yieh
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/66 ; C23C16/46 ; C23C16/34 ; C23C16/36 ; C23C16/455
Abstract:
A method for forming a thermally stable spacer layer is disclosed. The method includes first disposing a substrate in an internal volume of a processing chamber. The substrate has a film formed thereon, the film including silicon, carbon, nitrogen, and hydrogen. Next, high pressure steam is introduced into the processing chamber. The film is exposed to the high pressure steam to convert the film to reacted film, the reacted film including silicon, carbon, oxygen, and hydrogen.
Public/Granted literature
- US20190311896A1 METHOD TO FABRICATE THERMALLY STABLE LOW K-FINFET SPACER Public/Granted day:2019-10-10
Information query
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