Invention Grant
- Patent Title: Film forming method and film forming apparatus
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Application No.: US15459441Application Date: 2017-03-15
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Publication No.: US10714332B2Publication Date: 2020-07-14
- Inventor: Noriaki Fukiage , Takayuki Karakawa , Toyohiro Kamada , Akihiro Kuribayashi , Takeshi Oyama , Jun Ogawa , Kentaro Oshimo , Shimon Otsuki , Hideomi Hane
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7b1bfb43 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@12c8881a
- Main IPC: H01L21/469
- IPC: H01L21/469 ; H01L21/02 ; C23C16/455 ; C23C16/02 ; C23C16/34 ; C23C16/04
Abstract:
A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.
Public/Granted literature
- US20170271143A1 Film Forming Method and Film Forming Apparatus Public/Granted day:2017-09-21
Information query
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