Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US15365790Application Date: 2016-11-30
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Publication No.: US10714375B2Publication Date: 2020-07-14
- Inventor: Kazunobu Kuwazawa , Shigeyuki Sakuma , Hiroaki Nitta , Mitsuo Sekisawa , Takehiro Endo
- Applicant: SEIKO EPSON CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SEIKO EPSON CORPORATION
- Current Assignee: SEIKO EPSON CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@28ed3221
- Main IPC: H01L27/082
- IPC: H01L27/082 ; H01L21/761 ; H01L29/735 ; H01L29/66 ; H01L29/78 ; H01L21/8224 ; H01L21/8228 ; H01L27/092 ; H01L29/732 ; H01L21/225 ; H01L27/06 ; H01L27/08 ; H01L29/06 ; H01L29/866 ; H01L29/94 ; H01L29/10 ; H01L29/08 ; H01L29/423
Abstract:
A semiconductor device is provided in which a zener diode having a desired breakdown voltage and a capacitor in which voltage dependence of capacitance is reduced are mounted together, and various circuits are realized. The semiconductor device includes: a semiconductor layer; a first conductivity type well that is arranged in a first region of the semiconductor layer; a first conductivity type first impurity diffusion region that is arranged in the well; a first conductivity type second impurity diffusion region that is arranged in a second region of the semiconductor layer; an insulating film that is arranged on the second impurity diffusion region; an electrode that is arranged on the insulating film; and a second conductivity type third impurity diffusion region that is arranged at least on the first impurity diffusion region.
Public/Granted literature
- US20170170053A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-06-15
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