Invention Grant
- Patent Title: Structure and method using metal spacer for insertion of variable wide line implantation in SADP/SAQP integration
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Application No.: US16239981Application Date: 2019-01-04
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Publication No.: US10714389B2Publication Date: 2020-07-14
- Inventor: Hsueh-Chung Chen , James Kelly , Yann Mignot , Cornelius Brown Peethala , Lawrence A. Clevenger
- Applicant: ELPIS TECHNOLOGIES INC.
- Applicant Address: CA Ottawa
- Assignee: ELPIS TECHNOLOGIES, INC.
- Current Assignee: ELPIS TECHNOLOGIES, INC.
- Current Assignee Address: CA Ottawa
- Agency: Borden Ladner Gervais LLP
- Agent Shin Hung
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/528
Abstract:
Semiconductor devices and methods to fabricate the devices are provided. For example, a semiconductor device includes a back-end-of-line (BEOL) structure formed on a semiconductor substrate. The BEOL structure further includes at least one metallization layer comprising a pattern of elongated parallel metal lines. The pattern of elongated metal lines comprises a plurality of metal lines having a minimum width and at least one wider metal line having a width which is greater than the minimum width.
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