Invention Grant
- Patent Title: Method of forming metal interconnection
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Application No.: US16230534Application Date: 2018-12-21
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Publication No.: US10714424B2Publication Date: 2020-07-14
- Inventor: Shin-Yi Yang , Ming-Han Lee , Shau-Lin Shue , Tz-Jun Kuo
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L21/768 ; H01L23/532 ; H01L29/423

Abstract:
A device includes a first conductive feature disposed over a substrate; a second conductive feature disposed directly on and in physical contact with the first conductive feature; a dielectric layer surrounding sidewalls of the second conductive feature; and a first barrier layer interposed between the second conductive feature and the dielectric layer and in physical contact with both the second conductive feature and the dielectric layer. The first barrier layer and the dielectric layer comprise at least two common elements.
Public/Granted literature
- US20190115297A1 Method of Forming Metal Interconnection Public/Granted day:2019-04-18
Information query
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