Invention Grant
- Patent Title: Semiconductor structure and method for manufacturing the same
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Application No.: US15981133Application Date: 2018-05-16
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Publication No.: US10714433B2Publication Date: 2020-07-14
- Inventor: Pu-Fang Chen , Shi-Chieh Lin , Victor Y. Lu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L23/12
- IPC: H01L23/12 ; H01L23/00 ; H01L23/544 ; H01L21/48 ; H01L21/56 ; H01L23/498 ; H01L23/31

Abstract:
A method of manufacturing a semiconductor structure includes the following operations. A wafer with an orientation mark at a first crystal orientation represented by a family of Miller indices comprising is provided, wherein i2+ j2+ k2=2. A first chip and a second chip are connected to a first surface of the wafer. A first edge of the first chip and a second edge of the second chip are adjacent to each other. A boundary extending in a direction between the first edge and the second edge is formed. The direction is not parallel to the first crystal orientation.
Public/Granted literature
- US20190355670A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2019-11-21
Information query
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