Invention Grant
- Patent Title: Electrostatic discharge protection structure
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Application No.: US16427711Application Date: 2019-05-31
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Publication No.: US10714469B2Publication Date: 2020-07-14
- Inventor: Fei Zhou
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai CN Beijing
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@583709a4
- Main IPC: H01L23/62
- IPC: H01L23/62 ; H01L27/02 ; H01L21/306 ; H01L21/308 ; H01L21/8234 ; H01L27/088 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/423 ; H01L21/311
Abstract:
An electrostatic discharge protection structure is provided and includes a base substrate including a substrate and a fin portion on the substrate. The substrate includes a first region and a second region. A first doped layer is on a surface of the fin portion in the first region. A second doped layer is on a surface of the fin portion in the second region and on a surface of the substrate in the second region.
Public/Granted literature
- US20190287958A1 ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE Public/Granted day:2019-09-19
Information query
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