Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
-
Application No.: US16178340Application Date: 2018-11-01
-
Publication No.: US10714475B2Publication Date: 2020-07-14
- Inventor: Sung-Li Wang , Pang-Yen Tsai , Yasutoshi Okuno
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/45 ; H01L21/8238 ; H01L29/08 ; H01L21/02 ; H01L21/768 ; H01L29/78 ; H01L21/321 ; H01L29/66 ; H01L21/3105 ; H01L21/311
Abstract:
A semiconductor device includes first and second epitaxial structures, first and second top metal alloy layers, and first and second bottom metal alloy layers. The first and second epitaxial structures have different cross sections. The first and second top metal alloy layers are respectively in contact with the first and second epitaxial structures. The first and second bottom metal alloy layers are respectively in contact with the first and second epitaxial structures and respectively under the first and second top metal alloy layers. The first top metal alloy layer and the first bottom metal alloy layer are made of different materials.
Public/Granted literature
- US20190164966A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-05-30
Information query
IPC分类:
