Invention Grant
- Patent Title: Semiconductor structure having air gap between gate electrode and distal end portion of active area and fabrication method thereof
-
Application No.: US16412447Application Date: 2019-05-15
-
Publication No.: US10714481B2Publication Date: 2020-07-14
- Inventor: Feng-Yi Chang , Fu-Che Lee
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4df929c1
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/06 ; H01L29/49 ; H01L21/764
Abstract:
A semiconductor structure includes a semiconductor substrate having a trench isolation region formed therein. A conductive gate electrode is buried in the trench isolation region. An air gap is disposed between the conductive gate electrode and the semiconductor substrate.
Public/Granted literature
Information query
IPC分类:
