An SRAM structure is provided. The SRAM structure includes a plurality of first well regions with a first doping type, a plurality of second well regions with a second doping type, a third well region with the second doping type, a plurality of first well pick-up regions, a plurality of second well pick-up regions, and a plurality of memory cells. The first well regions, the second well regions, and the third well region are formed in a semiconductor substrate. The third well region is adjacent to the second well regions. The first well pick-up regions are formed in the first well regions. The second well pick-up regions are formed in the third well region. The second well pick-up regions are shared by the third well region and the second well regions. The memory cells are formed on the first and second well regions.