Invention Grant
- Patent Title: Semiconductor device which includes Fins
-
Application No.: US16126875Application Date: 2018-09-10
-
Publication No.: US10714485B2Publication Date: 2020-07-14
- Inventor: Chih-Liang Chen , Chih-Ming Lai , Charles Chew-Yuen Young , Chin-Yuan Tseng , Jiann-Tyng Tzeng , Kam-Tou Sio , Ru-Gun Liu , Wei-Liang Lin , L. C. Chou
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L21/8234 ; H01L27/088 ; H01L21/308 ; H01L29/78 ; H01L29/66 ; H01L21/311

Abstract:
A semiconductor device including multiple fins. At least a first set of fins among the multiple fins is substantially parallel. At least a second set of fins among the multiple fins is substantially collinear. For any given first and second fins of the multiple fins having corresponding first and second fin-thicknesses, the second fin-thickness is less than plus or minus about 50% of the first fin-thickness.
Public/Granted literature
- US20190019797A1 SEMICONDUCTOR DEVICE WHICH INCLUDES FINS Public/Granted day:2019-01-17
Information query
IPC分类: