Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US16294150Application Date: 2019-03-06
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Publication No.: US10714498B2Publication Date: 2020-07-14
- Inventor: Harumi Seki , Yuichiro Mitani , Takamitsu Ishihara
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@66c91ab2
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/1157 ; G11C8/14 ; H01L23/522 ; H01L27/11565 ; H01L27/11563
Abstract:
According to one embodiment, a semiconductor memory device includes: a first interconnect layer; a second interconnect layer adjacent to the first interconnect layer; a semiconductor layer between the first and second interconnect layers; a first charge storage layer between the first interconnect layer and the semiconductor layer; and a second charge storage layer between the second interconnect layer and the semiconductor layer. A first distance between the first and second interconnect layers is shorter than a second distance between the first and second charge storage layers.
Public/Granted literature
- US20200091180A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2020-03-19
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