Invention Grant
- Patent Title: Resistive memory array and fabricating method thereof
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Application No.: US16230798Application Date: 2018-12-21
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Publication No.: US10714535B2Publication Date: 2020-07-14
- Inventor: Ku-Feng Lin , Hung-Chang Yu , Kai-Chun Lin , Yu-Der Chih
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L45/00 ; H01L23/48 ; H01L23/522 ; H01L23/528 ; H01L25/18 ; H01L27/088 ; H01L23/532

Abstract:
A method includes forming an insulator over a substrate. The insulator includes a first electrode, a second electrode, and a resistive element between the first electrode and the second electrode. The insulator is transformed into a resistor by applying a voltage to the insulator. The resistor is electrically connected to a transistor after transforming the insulator into the resistor.
Public/Granted literature
- US20190123107A1 RESISTIVE MEMORY ARRAY AND FABRICATING METHOD THEREOF Public/Granted day:2019-04-25
Information query
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