Invention Grant
- Patent Title: Silicon carbide semiconductor device having halogen field limiting ring regions and method of manufacturing same
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Application No.: US16303797Application Date: 2017-05-19
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Publication No.: US10714571B2Publication Date: 2020-07-14
- Inventor: Akihiro Koyama , Kohei Ebihara
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Xsensus LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@38843084
- International Application: PCT/JP2017/018816 WO 20170519
- International Announcement: WO2018/016165 WO 20180125
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L29/06 ; H01L29/12 ; H01L29/47 ; H01L29/78 ; H01L29/87 ; H01L29/40 ; H01L29/872 ; H01L21/02
Abstract:
A semiconductor layer having n-type is made of silicon carbide, and has an element region and a terminal region. A plurality of field limiting ring regions having p-type are provided in the terminal region of the semiconductor layer, and are arranged spaced apart from one another. A field insulating film is provided in the terminal region of the semiconductor layer, and is in contact with the field limiting ring regions and the semiconductor layer. Each of the field limiting regions includes a halogen-containing field limiting ring part in contact with the field insulating film and containing halogen family atoms.
Public/Granted literature
- US20190237548A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME Public/Granted day:2019-08-01
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