Invention Grant
- Patent Title: Shielded trench devices
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Application No.: US16363812Application Date: 2019-03-25
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Publication No.: US10714574B2Publication Date: 2020-07-14
- Inventor: Hamza Yilmaz
- Applicant: iPower Semiconductor
- Applicant Address: US CA Gilroy
- Assignee: iPower Semiconductor
- Current Assignee: iPower Semiconductor
- Current Assignee Address: US CA Gilroy
- Agent David Millers
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L29/423 ; H01L29/06 ; H01L29/739 ; H01L29/78
Abstract:
A shield trench power device such as a trench MOSFET or IGBT employs a gate structure with an underlying polysilicon shield region that contacts a shield region in an epitaxial or crystalline layer of the device.
Information query
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